onsemi · FETs & Power MOSFETs · MPN FDBL86063
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 95nC@10V |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 357W |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| RDS(on) | 2.6mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.12nF |
100V 4V 357W 2.6mΩ 1 N-channel HPSOF-8 Single FETs, MOSFETs RoHS