onsemi · FETs & Power MOSFETs · MPN FDBL0630N150
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| Gate Charge(Qg) | 90nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 169A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 500W |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 6.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.805nF |
150V 169A 4V 500W 6.3mΩ@10V 1 N-channel HPSOF-8 Single FETs, MOSFETs RoHS