onsemi · FETs & Power MOSFETs · MPN FDBL0240N100
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| Gate Charge(Qg) | 111nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 210A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Pd - Power Dissipation | 3.5W;300W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 2.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.755nF |
100V 210A 2.9V 2.8mΩ@10V 1 N-channel HPSOF-8 Single FETs, MOSFETs RoHS