onsemi · FETs & Power MOSFETs · MPN FDBL0150N80
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| Gate Charge(Qg) | 188nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 300A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 429W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12.8nF |
80V 300A 4V 429W 1.4mΩ@10V 1 N-channel HPSOF-8 Single FETs, MOSFETs RoHS