onsemi · FETs & Power MOSFETs · MPN FDBL0110N60
No reviews yet — be the first to review onsemi FDBL0110N60.
| Gate Charge(Qg) | 170nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 300A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 429W |
| Reverse Transfer Capacitance (Crss@Vds) | 255pF |
| RDS(on) | 1.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.65nF |
60V 300A 429W MO-299A