onsemi · FETs & Power MOSFETs · MPN FDB9509L-F085
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| Gate Charge(Qg) | 22nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 16.1A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 3.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF |
| RDS(on) | 6.4mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.4nF |
40V 16.1A 1.7V 3.5W 6.4mΩ@10V 1 P-Channel D2PAK-3 Single FETs, MOSFETs RoHS