onsemi · FETs & Power MOSFETs · MPN FDB9506L-F085
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| Gate Charge(Qg) | 126nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 176W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 3.6mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 9.1nF |
40V 110A 1V 176W 3.6mΩ@10V 1 P-Channel TO-263 Single FETs, MOSFETs RoHS