onsemi · FETs & Power MOSFETs · MPN FDB9409-F085
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| Gate Charge(Qg) | 43nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 94W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 2.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.98nF |
40V 80A 94W 2.5mΩ@10V 1 N-channel TO-263AB Single FETs, MOSFETs RoHS