onsemi · FETs & Power MOSFETs · MPN FDB8896-F085
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 67nC@10V |
| Current - Continuous Drain(Id) | 93A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 80W |
| Reverse Transfer Capacitance (Crss@Vds) | 300pF |
| RDS(on) | 6.8mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.525nF |
| Type | N-Channel |
30V 93A 2.5V 80W 6.8mΩ@4.5V 1 N-channel N-Channel TO-263AB Single FETs, MOSFETs RoHS