onsemi · FETs & Power MOSFETs · MPN FDB8880
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 29nC@10V |
| Output Capacitance(Coss) | 255pF |
| Current - Continuous Drain(Id) | 54A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 55W |
| Reverse Transfer Capacitance (Crss@Vds) | 147pF |
| RDS(on) | 14.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.24nF |
| Type | N-Channel |
30V 54A 2.5V 55W 14.5mΩ@4.5V 1 N-channel N-Channel TO-263AB Single FETs, MOSFETs RoHS