onsemi FDB8878

onsemi · FETs & Power MOSFETs · MPN FDB8878

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)23nC@10V
Current - Continuous Drain(Id)48A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation47.3W
RDS(on)14mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.235nF

Technical details

30V 48A 2.5V 47.3W 14mΩ@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS

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