onsemi · FETs & Power MOSFETs · MPN FDB8860-F085
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 214nC@10V |
| Output Capacitance(Coss) | 2.275nF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 254W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.575nF |
| RDS(on) | 2.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12.585nF |
| Type | N-Channel |
30V 80A 3V 254W 2.3mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS