onsemi · FETs & Power MOSFETs · MPN FDB8832
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| Gate Charge(Qg) | 100nC@5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 2.14nF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.26nF |
| RDS(on) | 1.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.4nF |
| Type | N-Channel |
N-Channel 30V 80A Surface Mount D2PAK(TO-263)