onsemi · FETs & Power MOSFETs · MPN FDB86363-F085
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF |
| RDS(on) | 2.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10nF |
N-Channel 80V 110A 300W Surface Mount D2PAK(TO-263)