onsemi · FETs & Power MOSFETs · MPN FDB86135
No reviews yet — be the first to review onsemi FDB86135.
| Gate Charge(Qg) | 89nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 75A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.4W;227W |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| RDS(on) | 3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.485nF |
100V 75A 4V 3mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS