onsemi · FETs & Power MOSFETs · MPN FDB8444TS
No reviews yet — be the first to review onsemi FDB8444TS.
| Gate Charge(Qg) | 169nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 765pF |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 181W |
| Reverse Transfer Capacitance (Crss@Vds) | 485pF |
| RDS(on) | 8.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.41nF |
| Type | N-Channel |
40V 70A 4V 181W 8.5mΩ@10V 1 N-channel N-Channel TO-263-5 Single FETs, MOSFETs RoHS