onsemi · FETs & Power MOSFETs · MPN FDB8444
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| Gate Charge(Qg) | 128nC |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 640pF |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 167W |
| Reverse Transfer Capacitance (Crss@Vds) | 435pF |
| RDS(on) | 9.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | - |
40V 70A 4V 167W 9.9mΩ@10V 1 N-channel TO-263AB Single FETs, MOSFETs RoHS