onsemi FDB8443

onsemi · FETs & Power MOSFETs · MPN FDB8443

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage40V
Current - Continuous Drain(Id)182A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation188W
Reverse Transfer Capacitance (Crss@Vds)510pF
RDS(on)2.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.31nF

Technical details

40V 182A 2.8V 188W 2.3mΩ@10V 1 N-channel TO-263AB Single FETs, MOSFETs RoHS

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