onsemi · FETs & Power MOSFETs · MPN FDB8441
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| Gate Charge(Qg) | 215nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 685pF |
| RDS(on) | 2.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 15nF |
40V 80A 4V 300W 2.5mΩ@10V 1 N-channel TO-263AB Single FETs, MOSFETs RoHS