onsemi · FETs & Power MOSFETs · MPN FDB8160
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 243nC@10V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 254W |
| RDS(on) | 1.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.825nF |
30V 80A 4V 254W 1.8mΩ@10V 1 N-channel TO-263AB Single FETs, MOSFETs RoHS