onsemi · FETs & Power MOSFETs · MPN FDB8030L
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 170nC@4.5V |
| Output Capacitance(Coss) | 2.7nF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -65℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 187W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.65nF |
| RDS(on) | 4.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.5nF |
| Type | N-Channel |
30V 80A 2V 187W 4.5mΩ@4.5V 1 N-channel N-Channel TO-263AB Single FETs, MOSFETs RoHS