onsemi · FETs & Power MOSFETs · MPN FDB5800
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 135nC@10V |
| Output Capacitance(Coss) | 628pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 242W |
| Reverse Transfer Capacitance (Crss@Vds) | 262pF |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.625nF |
| Type | N-Channel |
60V 80A 2.5V 242W 6mΩ@10V 1 N-channel N-Channel D2PAK-3 Single FETs, MOSFETs RoHS