onsemi · FETs & Power MOSFETs · MPN FDB5680
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| Gate Charge(Qg) | 46nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 230pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -65℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 65W |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF |
| RDS(on) | 20mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.85nF |
| Type | N-Channel |
60V 40A 4V 65W 20mΩ@10V 1 N-channel N-Channel TO-263AB Single FETs, MOSFETs RoHS