onsemi · FETs & Power MOSFETs · MPN FDB52N20TM
No reviews yet — be the first to review onsemi FDB52N20TM.
| Gate Charge(Qg) | 63nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 52A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 357W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 49mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.9nF |
200V 52A 3V 357W 49mΩ@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS