onsemi · FETs & Power MOSFETs · MPN FDB44N25TM
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| Gate Charge(Qg) | 61nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Output Capacitance(Coss) | 585pF |
| Current - Continuous Drain(Id) | 44A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 307W |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 69mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.87nF |
| Type | N-Channel |
250V 44A 5V 307W 69mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS