onsemi · FETs & Power MOSFETs · MPN FDB38N30U
No reviews yet — be the first to review onsemi FDB38N30U.
| Gate Charge(Qg) | 56nC@10V |
|---|---|
| Drain to Source Voltage | 300V |
| Current - Continuous Drain(Id) | 38A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 313W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 103mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.51nF |
300V 38A 5V 313W 103mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS