onsemi · FETs & Power MOSFETs · MPN FDB3632
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| Output Capacitance(Coss) | 820pF |
|---|---|
| Pd - Power Dissipation | 310W |
| Configuration | - |
| Gate Charge(Qg) | 110nC@10V |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 12A;80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 7.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6nF |
310W 100V 4V 7.5mΩ@10V 1 N-channel N-Channel D2PAK-3 Single FETs, MOSFETs RoHS