onsemi · FETs & Power MOSFETs · MPN FDB3502
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 75V |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 41W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 47mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 815pF |
N-Channel 75V 14A 41W Surface Mount TO-263AB