onsemi · FETs & Power MOSFETs · MPN FDB2614
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| Gate Charge(Qg) | 66nC@100V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 62A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 260W |
| Reverse Transfer Capacitance (Crss@Vds) | 165pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.23nF |
N-Channel 200V 62A 260W Surface Mount D2PAK(TO-263)