onsemi · FETs & Power MOSFETs · MPN FDB1D7N10CL7
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| Gate Charge(Qg) | 116nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 5.025nF |
| Current - Continuous Drain(Id) | 268A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.1V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 1.75mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.6nF |
| Type | N-Channel |
N-Channel 100V 268A 250W Surface Mount TO-263-6