onsemi · FETs & Power MOSFETs · MPN FDB14AN06LA0-F085
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| Gate Charge(Qg) | 24nC@5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 115pF |
| RDS(on) | 10.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.9nF |
60V 60A 3V 125W 10.2mΩ@10V 1 N-channel TO-263AB Single FETs, MOSFETs RoHS