onsemi FDB14AN06LA0

onsemi · FETs & Power MOSFETs · MPN FDB14AN06LA0

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)31nC@5V
Output Capacitance(Coss)270pF
Current - Continuous Drain(Id)67A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)14.6mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)2.9nF
TypeN-Channel

Technical details

60V 67A 3V 125W 14.6mΩ@5V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS

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