onsemi · FETs & Power MOSFETs · MPN FDB12N50TM
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| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 11.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 165W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 550mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.315nF |
N-Channel 500V 11.5A 165W Surface Mount D2PAK