onsemi · FETs & Power MOSFETs · MPN FDB12N50FTM-WS
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| Gate Charge(Qg) | 21nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 11.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 165W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 590mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
500V 11.5A 5V 165W 590mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS