onsemi · FETs & Power MOSFETs · MPN FDB120N10
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 86nC@10V |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 74A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 170W |
| Reverse Transfer Capacitance (Crss@Vds) | 255pF |
| RDS(on) | 9.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.605nF |
100V 74A 2.5V 170W 9.7mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS