onsemi · FETs & Power MOSFETs · MPN FDB082N15A
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| Gate Charge(Qg) | 64.5nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 117A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 294W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 6.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.645nF |
150V 117A 4V 294W 6.7mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS