onsemi · FETs & Power MOSFETs · MPN FDB0630N1507L
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| Gate Charge(Qg) | 135nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 130A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 6.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.895nF |
150V 130A 2.9V 300W 6.4mΩ@10V 1 N-channel TO-263-6 Single FETs, MOSFETs RoHS