onsemi · FETs & Power MOSFETs · MPN FDB047N10
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| Gate Charge(Qg) | 210nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.5nF |
| Current - Continuous Drain(Id) | 164A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 680pF |
| RDS(on) | 4.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 15.265nF |
| Type | N-Channel |
100V 164A 4.5V 375W 4.7mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS