onsemi · FETs & Power MOSFETs · MPN FDB045AN08A0-F085
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 75V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 310W |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF |
| RDS(on) | 3.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.6nF |
75V 19A 4V 310W 3.9mΩ@10V 1 N-channel TO-263AB Single FETs, MOSFETs RoHS