onsemi FDB045AN08A0

onsemi · FETs & Power MOSFETs · MPN FDB045AN08A0

No reviews yet — be the first to review onsemi FDB045AN08A0.

Specifications

Drain to Source Voltage75V
Gate Charge(Qg)138nC@10V
Output Capacitance(Coss)1nF
Current - Continuous Drain(Id)19A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation310W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.6nF
TypeN-Channel

Technical details

N-Channel 75V 19A 310W Surface Mount D2PAK(TO-263)

Related FETs & Power MOSFETs