onsemi · FETs & Power MOSFETs · MPN FDB039N06
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| Gate Charge(Qg) | 133nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 174A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 231W |
| Reverse Transfer Capacitance (Crss@Vds) | 580pF |
| RDS(on) | 3.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.235nF |
| Type | N-Channel |
60V 174A 4.5V 231W 3.9mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS