onsemi · FETs & Power MOSFETs · MPN FDB035N10A
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| Gate Charge(Qg) | 116nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 214A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| RDS(on) | 3.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.295nF |
100V 214A 4V 3.5mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS