onsemi · FETs & Power MOSFETs · MPN FDB031N08
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| Gate Charge(Qg) | 220nC@10V |
|---|---|
| Drain to Source Voltage | 75V |
| Current - Continuous Drain(Id) | 235A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 800pF |
| RDS(on) | 2.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 15.16nF |
75V 235A 4.5V 375W 2.4mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS