onsemi · FETs & Power MOSFETs · MPN FDB0250N807L
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| Gate Charge(Qg) | 200nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 240A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 165pF |
| RDS(on) | 2.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 15.4nF |
N-Channel 80V 240A 214W TO-263-7