onsemi · FETs & Power MOSFETs · MPN FDB024N08BL7
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| Gate Charge(Qg) | 178nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 246W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 2.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.53nF |
80V 120A 4.5V 246W 2.4mΩ@10V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS