onsemi · FETs & Power MOSFETs · MPN FDB024N04AL7
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| Gate Charge(Qg) | 109nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 219A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF |
| RDS(on) | 2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.3nF |
40V 219A 3V 214W 2mΩ@10V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS