onsemi FDB0170N607L

onsemi · FETs & Power MOSFETs · MPN FDB0170N607L

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage60V
Current - Continuous Drain(Id)300A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.8W;250W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)1.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)19.25nF

Technical details

N-Channel 60V 300A 3.8W 250W TO-263-7

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