onsemi · FETs & Power MOSFETs · MPN FDB0165N807L
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| Gate Charge(Qg) | 304nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 310A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.8W;300W |
| Reverse Transfer Capacitance (Crss@Vds) | 335pF |
| RDS(on) | 1.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 23.66nF |
80V 310A 4V 1.2mΩ@10V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS