onsemi · FETs & Power MOSFETs · MPN FDAF59N30
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| Drain to Source Voltage | 300V |
|---|---|
| Gate Charge(Qg) | 100nC@10V |
| Output Capacitance(Coss) | 920pF |
| Current - Continuous Drain(Id) | 34A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 161W |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 56mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.67nF |
| Type | N-Channel |
300V 34A 5V 161W 56mΩ@10V 1 N-channel N-Channel TO-3PF Single FETs, MOSFETs RoHS