onsemi · FETs & Power MOSFETs · MPN FDA69N25
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| Gate Charge(Qg) | 100nC |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 69A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 480W |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 41mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.64nF |
N-Channel 250V 69A 480W Through Hole TO-3PN