onsemi FDA69N25

onsemi · FETs & Power MOSFETs · MPN FDA69N25

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Specifications

Gate Charge(Qg)100nC
Drain to Source Voltage250V
Current - Continuous Drain(Id)69A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation480W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)41mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.64nF

Technical details

N-Channel 250V 69A 480W Through Hole TO-3PN

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